| PART |
Description |
Maker |
| 2SD2678 |
3A / 12V Bipolar transistor
|
Rohm
|
| AT-42036 AT-42036-TR1 AT-42036-BLK |
AT-42036 · General purpose transistor
Agilent AT-42036 Up to 6 GHz Medium Power Silicon Bipolar Transistor
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 80MA I(C) | MICRO-X
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| MC78L12CPD |
VOLT REGULATOR,FIXED, 12V,BIPOLAR,SIP,3PIN,PLASTIC
From old datasheet system
|
Motorola Semiconductor Products Inc
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| BA05SFP BA12ST BA05ST |
5 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PSFM5
VOLTREGULATOR|FIXED| 5V|BIPOLAR|SIP|5PIN|PLASTIC
VOLTREGULATOR|FIXED| 12V|BIPOLAR|SIP|5PIN|PLASTIC
IC,VOLT REGULATOR,FIXED, 5V,BIPOLAR,SIP,5PIN,PLASTIC
|
Rohm Co Ltd
|
| CPH6223-TL-E |
Bipolar Transistor
Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| 210-99-648-41-001 210-91-306-41-001 210-91-308-41- |
PWR SUP 250W 3.3/5/12/-12V QUAD 双列直插式插座封闭框架焊
CONVERTER DC-DC 20W 12V/15V SGL 双列直插式插座封闭框架焊
Dual-in-line sockets Closed frame Solder tail 双列直插式插座封闭框架焊
CONVERTER DC-DC 20W 12V/5V DUAL
CONVERTER DC-DC 20W 12V/12V SGL
CONVERTER DC-DC 20W 24V/15V DUAL
Dual-in-linesocketsClosedframeSoldertail
|
PRECI-DIP SA
Precid-DipDurtalSA
PREDIP[Precid-Dip Durtal SA]
|
| AT-31011 AT-31011-BLK AT-31011-TR1 AT-31033 AT-310 |
TERM BLOCK HDR 5.08MM 3POS PCB
Low Current/ High Performance NPN Silicon Bipolar Transistor
Low Current High Performance NPN Silicon Bipolar Transistor
Low Current, High Performance NPN Silicon Bipolar Transistor
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2SK2647 2SK2647-01MR 2SK2647-01 |
PWR SUPPLY TRPL 5V/12V/12V 60W
N-channel MOS-FET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
